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X-ray Absorption Spectroscopy of Ultrathin Nickel Silicide Films: A Theoretical and Experimental Investigation

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Title: X-ray Absorption Spectroscopy of Ultrathin Nickel Silicide Films: A Theoretical and Experimental Investigation
Author: Arthur, Zachary
Department: Department of Physics
Program: Physics
Advisor: Jiang, De-Tong
Abstract: Previous studies have attempted to probe the structure of ultra-thin Nickel silicide films as they evolve in the manufacturing process with limited success. These studies have used ultra-thin Nickel silicide films that were quenched during the manufacturer's annealing process at select temperatures. This study aims to determine the structure of quenched ultra-thin Ni-Si films using Grazing Incidence X-Ray Absorption Near Edge Spectroscopy (GI-XANES) and ab-initio calculations (FDMNES). Successful calculations were prepared for the δ and θ Ni2Si phases, as well as the Ni3Si2, NiSi and NiSi2 phases. The GI-XANES experimental data was taken at the Canadian Light Source, at the Hard X-Ray Microanalysis Beamline (HXMA). XANES and FDMNES are used to identify two phases of the ultra-thin films: the as-deposited phase as a low-ordered Ni3Si2 phase, and the epitaxial NiSi2 phase was found in samples annealed past 400˚C.
URI: http://hdl.handle.net/10214/6380
Date: 2013-04
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